IRF510PBF MOSFET
Specifications of IRF510PBF MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 0.54 mΩ
- Continuous Drain Current: 5.6 A
- Total Gate Charge: 8.3 nC
- Power Dissipation: 43 W
- Package: TO-220AB
Pinout of IRF510PBF
Replacement and Equivalent of IRF510PBF Transistor
You can replace the IRF510PBF with the
IRF510,
IRF520,
IRF520PBF,
IRF530,
IRF530PBF,
IRF540,
IRF540PBF,
IRF630,
IRF630PBF,
IRF634,
IRF640,
IRF640PBF,
IRF644,
IRFB13N50A,
IRFB17N50L
