IRF644 MOSFET
Specifications of IRF644 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 250 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 0.28 mΩ
- Continuous Drain Current: 14 A
- Total Gate Charge: 68 nC
- Power Dissipation: 125 W
- Package: TO-220AB
Pinout of IRF644
