Specifications of IRF630 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 0.4
  • Continuous Drain Current: 9 A
  • Total Gate Charge: 43 nC
  • Power Dissipation: 74 W
  • Package: TO-220AB

Pinout of IRF630

IRF630 pinout

Replacement and Equivalent of IRF630 Transistor

You can replace the IRF630 with the IRF630PBF, IRF640, IRF640PBF, IRF644, IRFB17N50L