IRF640PBF MOSFET

Specifications of IRF640PBF MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 0.18 mΩ
  • Continuous Drain Current: 18 A
  • Total Gate Charge: 70 nC
  • Power Dissipation: 125 W
  • Package: TO-220AB

Pinout of IRF640PBF

IRF640PBF pinout

Replacement and Equivalent of IRF640PBF Transistor

You can replace the IRF640PBF with the IRF640