IRFB17N50L MOSFET
Specifications of IRFB17N50L MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 500 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 0.32 mΩ
- Continuous Drain Current: 16 A
- Total Gate Charge: 130 nC
- Power Dissipation: 220 W
- Package: TO-220AB
Pinout of IRFB17N50L
