IRF530PBF MOSFET

Specifications of IRF530PBF MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 0.16 mΩ
  • Continuous Drain Current: 14 A
  • Total Gate Charge: 26 nC
  • Power Dissipation: 88 W
  • Package: TO-220AB

Pinout of IRF530PBF

IRF530PBF pinout

Replacement and Equivalent of IRF530PBF Transistor

You can replace the IRF530PBF with the IRF530, IRF540, IRF540PBF