2N6533 Bipolar Transistor

Characteristics of 2N6533 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 65 W
  • DC Current Gain (hfe): 500 to 10000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of 2N6533

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6533 transistor

You can replace the 2N6533 with the BDT87, BDT87F, BDX53D, BDX53E, BDX53F, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030 or MJF15030G.
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