MJ14001G Bipolar Transistor

Characteristics of MJ14001G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -60 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 15 to 100
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ14001G is the lead-free version of the MJ14001 transistor

Pinout of MJ14001G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJ14001G is the MJ14000G.

Replacement and Equivalent for MJ14001G transistor

You can replace the MJ14001G with the MJ14001, MJ14003 or MJ14003G.
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