2SB633 Bipolar Transistor

Characteristics of 2SB633 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -85 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40 to 320
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB633

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB633 transistor can have a current gain of 40 to 320. The gain of the 2SB633-C will be in the range from 40 to 80, for the 2SB633-D it will be in the range from 60 to 120, for the 2SB633-E it will be in the range from 100 to 200, for the 2SB633-F it will be in the range from 160 to 320.


Sometimes the "2S" prefix is not marked on the package - the 2SB633 might only be marked "B633".

Complementary NPN transistor

The complementary NPN transistor to the 2SB633 is the 2SD613.

SMD Version of 2SB633 transistor

The BDP954 (SOT-223) is the SMD version of the 2SB633 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB633 transistor

You can replace the 2SB633 with the BD244C, BD802, BDT86, BDT86F, BDT88, BDT88F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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