IRF610PBF MOSFET
Specifications of IRF610PBF MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 1.5 mΩ
- Continuous Drain Current: 3.3 A
- Total Gate Charge: 8.2 nC
- Power Dissipation: 36 W
- Package: TO-220AB
Pinout of IRF610PBF
Replacement and Equivalent of IRF610PBF Transistor
You can replace the IRF610PBF with the
IRF610,
IRF620,
IRF620PBF,
IRF624,
IRF630,
IRF630PBF,
IRF634,
IRF640,
IRF640PBF,
IRF644,
IRF730,
IRF730A,
IRF730B,
IRF740,
IRF740A,
IRF740B,
IRF740LC,
IRF830,
IRF830A,
IRF830B,
IRF840,
IRF840A,
IRF840LC,
IRFB13N50A,
IRFB17N50L,
IRFB9N60A,
IRFB9N65A,
IRFBC40,
IRFBC40A,
IRFBC40LC