Specifications of IRF610PBF MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 1.5
  • Continuous Drain Current: 3.3 A
  • Total Gate Charge: 8.2 nC
  • Power Dissipation: 36 W
  • Package: TO-220AB

Pinout of IRF610PBF

IRF610PBF pinout

Replacement and Equivalent of IRF610PBF Transistor

You can replace the IRF610PBF with the IRF610, IRF620, IRF620PBF, IRF624, IRF630, IRF630PBF, IRF634, IRF640, IRF640PBF, IRF644, IRF730, IRF730A, IRF730B, IRF740, IRF740A, IRF740B, IRF740LC, IRF830, IRF830A, IRF830B, IRF840, IRF840A, IRF840LC, IRFB13N50A, IRFB17N50L, IRFB9N60A, IRFB9N65A, IRFBC40, IRFBC40A, IRFBC40LC