KSD363 Bipolar Transistor

Characteristics of KSD363 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 300 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40 to 240
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular 2SD363 transistor

Pinout of KSD363

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD363 transistor can have a current gain of 40 to 240. The gain of the KSD363-O will be in the range from 70 to 140, for the KSD363-R it will be in the range from 40 to 80, for the KSD363-Y it will be in the range from 120 to 240.

Replacement and Equivalent for KSD363 transistor

You can replace the KSD363 with the 2SD363, BDT87, BDT87F, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030, MJF15030G, TIP41D, TIP41E, TIP41F, TIP42D, TIP42E or TIP42F.
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