KSD363-R Bipolar Transistor

Characteristics of KSD363-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 300 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular 2SD363-R transistor

Pinout of KSD363-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD363-R transistor can have a current gain of 40 to 80. The gain of the KSD363 will be in the range from 40 to 240, for the KSD363-O it will be in the range from 70 to 140, for the KSD363-Y it will be in the range from 120 to 240.

Replacement and Equivalent for KSD363-R transistor

You can replace the KSD363-R with the 2SD363, 2SD363-R, BDT87, BDT87F, MJE15028, MJE15028G, MJE15030, MJE15030G, MJE5180, MJE5181, MJE5182, MJF15030, MJF15030G, TIP41D, TIP41E, TIP41F, TIP42D, TIP42E or TIP42F.
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