2SD602A-Q Bipolar Transistor
Characteristics of 2SD602A-Q Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 50 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 0.2 W
- DC Current Gain (hfe): 85 to 170
- Transition Frequency, min: 200 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
Pinout of 2SD602A-Q
Classification of hFE
Marking
Complementary PNP transistor
Replacement and Equivalent for 2SD602A-Q transistor
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