2SD602A-Q Bipolar Transistor

Characteristics of 2SD602A-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 85 to 170
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SD602A-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD602A-Q transistor can have a current gain of 85 to 170. The gain of the 2SD602A will be in the range from 85 to 340, for the 2SD602A-R it will be in the range from 120 to 240, for the 2SD602A-S it will be in the range from 170 to 340.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD602A-Q might only be marked "D602A-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD602A-Q is the 2SB710A-Q.

Replacement and Equivalent for 2SD602A-Q transistor

You can replace the 2SD602A-Q with the 2SC3325, 2SC3912, 2SC3913, 2SC3914, 2SC3915, FMMTA05, FMMTA06, KST05 or KST06.
If you find an error please send an email to mail@el-component.com