2SD602A Bipolar Transistor

Characteristics of 2SD602A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 85 to 340
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SD602A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD602A transistor can have a current gain of 85 to 340. The gain of the 2SD602A-Q will be in the range from 85 to 170, for the 2SD602A-R it will be in the range from 120 to 240, for the 2SD602A-S it will be in the range from 170 to 340.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD602A might only be marked "D602A".

Complementary PNP transistor

The complementary PNP transistor to the 2SD602A is the 2SB710A.

Replacement and Equivalent for 2SD602A transistor

You can replace the 2SD602A with the 2SC3912, 2SC3913, 2SC3914, 2SC3915, FMMTA05, FMMTA06, KST05 or KST06.
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