2SB710A-Q Bipolar Transistor

Characteristics of 2SB710A-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 85 to 170
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SB710A-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB710A-Q transistor can have a current gain of 85 to 170. The gain of the 2SB710A will be in the range from 85 to 340, for the 2SB710A-R it will be in the range from 120 to 240, for the 2SB710A-S it will be in the range from 170 to 340.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB710A-Q might only be marked "B710A-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB710A-Q is the 2SD602A-Q.

Replacement and Equivalent for 2SB710A-Q transistor

You can replace the 2SB710A-Q with the 2SA1313, 2SA1518, 2SA1519, 2SA1520, 2SA1521, FMMTA55, FMMTA56, KST55, KST56, MMBT4354 or MMBT4356.
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