2SD363-Y Bipolar Transistor

Characteristics of 2SD363-Y Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 300 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 120 to 240
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SD363-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD363-Y transistor can have a current gain of 120 to 240. The gain of the 2SD363 will be in the range from 40 to 240, for the 2SD363-O it will be in the range from 70 to 140, for the 2SD363-R it will be in the range from 40 to 80.


Sometimes the "2S" prefix is not marked on the package - the 2SD363-Y might only be marked "D363-Y".

Replacement and Equivalent for 2SD363-Y transistor

You can replace the 2SD363-Y with the BDT87, BDT87F, KSD363, KSD363-Y, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030, MJF15030G, TIP41D, TIP41E, TIP41F, TIP42D, TIP42E or TIP42F.
If you find an error please send an email to mail@el-component.com