BC850W Bipolar Transistor

Characteristics of BC850W Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 50 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1.2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC850W

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC850W transistor can have a current gain of 110 to 800. The gain of the BC850AW will be in the range from 110 to 220, for the BC850BW it will be in the range from 200 to 450, for the BC850CW it will be in the range from 420 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC850W is the BC860W.

Replacement and Equivalent for BC850W transistor

You can replace the BC850W with the BC846W or BC847W.
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