BC847W Bipolar Transistor

Characteristics of BC847W Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 50 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC847W

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC847W transistor can have a current gain of 110 to 800. The gain of the BC847AW will be in the range from 110 to 220, for the BC847BW it will be in the range from 200 to 450, for the BC847CW it will be in the range from 420 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC847W is the BC857W.

Replacement and Equivalent for BC847W transistor

You can replace the BC847W with the BC846W or BC850W.
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