KSD1616A-Y Bipolar Transistor

Characteristics of KSD1616A-Y Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 135 to 270
  • Transition Frequency, min: 160 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92
  • Electrically Similar to the Popular 2SD1616A-L transistor

Pinout of KSD1616A-Y

The KSD1616A-Y is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD1616A-Y transistor can have a current gain of 135 to 270. The gain of the KSD1616A will be in the range from 135 to 400, for the KSD1616A-G it will be in the range from 200 to 400.

Complementary PNP transistor

The complementary PNP transistor to the KSD1616A-Y is the KSB1116A-Y.

SMD Version of KSD1616A-Y transistor

The 2SD1615A (SOT-89) and 2SD1615A-GQ (SOT-89) is the SMD version of the KSD1616A-Y transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

KSD1616A-Y Transistor in TO-92 Package

The 2SD1616A-L is the TO-92 version of the KSD1616A-Y.

Replacement and Equivalent for KSD1616A-Y transistor

You can replace the KSD1616A-Y with the 2SC3243, 2SD1616A, 2SD1616A-L, 2SD667 or KTC1008.
If you find an error please send an email to mail@el-component.com