KSD1616A-G Bipolar Transistor
Characteristics of KSD1616A-G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 120 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 0.75 W
- DC Current Gain (hfe): 200 to 400
- Transition Frequency, min: 160 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
- Electrically Similar to the Popular 2SD1616A-K transistor
Pinout of KSD1616A-G
Here is an image showing the pin diagram of this transistor.
Classification of hFE
Complementary PNP transistor
SMD Version of KSD1616A-G transistor
KSD1616A-G Transistor in TO-92 Package
Replacement and Equivalent for KSD1616A-G transistor
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