KSD1616A Bipolar Transistor
Characteristics of KSD1616A Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 120 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 0.75 W
- DC Current Gain (hfe): 135 to 400
- Transition Frequency, min: 160 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
- Electrically Similar to the Popular 2SD1616A transistor
Pinout of KSD1616A
Here is an image showing the pin diagram of this transistor.
Classification of hFE
Complementary PNP transistor
SMD Version of KSD1616A transistor
KSD1616A Transistor in TO-92 Package
Replacement and Equivalent for KSD1616A transistor
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