KSD1616A Bipolar Transistor

Characteristics of KSD1616A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 135 to 400
  • Transition Frequency, min: 160 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92
  • Electrically Similar to the Popular 2SD1616A transistor

Pinout of KSD1616A

The KSD1616A is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD1616A transistor can have a current gain of 135 to 400. The gain of the KSD1616A-G will be in the range from 200 to 400, for the KSD1616A-Y it will be in the range from 135 to 270.

Complementary PNP transistor

The complementary PNP transistor to the KSD1616A is the KSB1116A.

SMD Version of KSD1616A transistor

The 2SD1615A (SOT-89) is the SMD version of the KSD1616A transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

KSD1616A Transistor in TO-92 Package

The 2SD1616A is the TO-92 version of the KSD1616A.

Replacement and Equivalent for KSD1616A transistor

You can replace the KSD1616A with the 2SD1616A.
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