KSB1116A Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -60 V
• Collector-Base Voltage, max: -80 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -1 A
• Collector Dissipation: 0.75 W
• DC Current Gain (h_fe): 135 to 400
• Transition Frequency, min: 120 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-92
• Electrically Similar to the Popular 2SB1116A transistor

The KSB1116A is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.The KSB1116A transistor can have a current gain of 135 to 400. The gain of the KSB1116A-G will be in the range from 200 to 400, for the KSB1116A-Y it will be in the range from 135 to 270.The complementary NPN transistor to the KSB1116A is the KSD1616A.The 2SB1115A (SOT-89) is the SMD version of the KSB1116A transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.The 2SB1116A is the TO-92 version of the KSB1116A.You can replace the KSB1116A with the 2SB1116A.