BD139-6 Bipolar Transistor

Characteristics of BD139-6 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 40 to 100
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of BD139-6

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD139-6 transistor can have a current gain of 40 to 100. The gain of the BD139 will be in the range from 40 to 250, for the BD139-10 it will be in the range from 63 to 160, for the BD139-16 it will be in the range from 100 to 250.

Complementary PNP transistor

The complementary PNP transistor to the BD139-6 is the BD140-6.

SMD Version of BD139-6 transistor

The BCP56 (SOT-223) is the SMD version of the BD139-6 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD139-6 transistor

You can replace the BD139-6 with the 2N4923, 2N4923G, BD139G, BD169, BD179, BD230, BD237, BD237G, BD379, BD379-6, BD441, BD441G, BD789, BD791, MJE240, MJE241, MJE242, MJE243, MJE243G, MJE244 or MJE722.
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