BD139 Bipolar Transistor

Characteristics of BD139 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 40 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of BD139

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD139 transistor can have a current gain of 40 to 250. The gain of the BD139-10 will be in the range from 63 to 160, for the BD139-16 it will be in the range from 100 to 250, for the BD139-6 it will be in the range from 40 to 100.

Complementary PNP transistor

The complementary PNP transistor to the BD139 is the BD140.

SMD Version of BD139 transistor

The BCP56 (SOT-223) is the SMD version of the BD139 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD139 transistor

You can replace the BD139 with the BD139G, BD169, BD179, BD230, BD237, BD237G, BD379, BD789, BD791, MJE242, MJE244 or MJE722.

Lead-free Version

The BD139G transistor is the lead-free version of the BD139.
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