2SB1626-O Bipolar Transistor

Characteristics of 2SB1626-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -110 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 5000 to 12000
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1626-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1626-O transistor can have a current gain of 5000 to 12000. The gain of the 2SB1626 will be in the range from 5000 to 30000, for the 2SB1626-P it will be in the range from 6500 to 20000, for the 2SB1626-Y it will be in the range from 15000 to 30000.

Equivalent circuit

2SB1626-O equivalent circuit


Sometimes the "2S" prefix is not marked on the package - the 2SB1626-O might only be marked "B1626-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1626-O is the 2SD2495-O.

Replacement and Equivalent for 2SB1626-O transistor

You can replace the 2SB1626-O with the BD652, BDT62C, BDT64C, BDT88, BDT88F, BDW48, BDW64D, BDW74D, BDX34D, BDX54D, BDX54E, BDX54F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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