IRFB4510G MOSFET
Specifications of IRFB4510G MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 13.5 mΩ
- Continuous Drain Current: 62 A
- Total Gate Charge: 58 nC
- Power Dissipation: 140 W
- Package: TO-220AB
Pinout of IRFB4510G
Replacement and Equivalent of IRFB4510G Transistor
You can replace the IRFB4510G with the
IRFB4110,
IRFB4110G,
IRFB4115,
IRFB4115G,
IRFB4310,
IRFB4310G,
IRFB4310Z,
IRFB4310ZG,
IRFB4410,
IRFB4410Z,
IRFB4410ZG,
IRFB4510
