IRFB4110 MOSFET

Specifications of IRFB4110 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 4.5 mΩ
  • Continuous Drain Current: 180 A
  • Total Gate Charge: 150 nC
  • Power Dissipation: 370 W
  • Package: TO-220AB

Pinout of IRFB4110

IRFB4110 pinout

Replacement and Equivalent of IRFB4110 Transistor

You can replace the IRFB4110 with the IRFB4110G