IRFB4310G MOSFET

Specifications of IRFB4310G MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 7 mΩ
  • Continuous Drain Current: 130 A
  • Total Gate Charge: 170 nC
  • Power Dissipation: 300 W
  • Package: TO-220AB

Pinout of IRFB4310G

IRFB4310G pinout

Replacement and Equivalent of IRFB4310G Transistor

You can replace the IRFB4310G with the IRFB4110, IRFB4110G, IRFB4310