IRF8010 MOSFET

Specifications of IRF8010 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 15 mΩ
  • Continuous Drain Current: 80 A
  • Total Gate Charge: 81 nC
  • Power Dissipation: 260 W
  • Package: TO-220AB

Pinout of IRF8010

IRF8010 pinout

Replacement and Equivalent of IRF8010 Transistor

You can replace the IRF8010 with the IRFB4110, IRFB4110G, IRFB4115, IRFB4115G, IRFB4310, IRFB4310G, IRFB4321, IRFB4321G