NTE194 Bipolar Transistor

Characteristics of NTE194 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.6 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 80 to 250
  • Transition Frequency, min: 300 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of NTE194

The NTE194 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

SMD Version of NTE194 transistor

The 2N5551S (SOT-23), DXT5551 (SOT-89), DZT5551 (SOT-223), KST43 (SOT-23), KST5551 (SOT-23), MMBT5551 (SOT-23) and PMBT5551 (SOT-23) is the SMD version of the NTE194 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for NTE194 transistor

You can replace the NTE194 with the 2N5551, 2N5551G or 2N5833.
If you find an error please send an email to mail@el-component.com