PMBT5551 Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 160 V
• Collector-Base Voltage, max: 180 V
• Emitter-Base Voltage, max: 6 V
• Collector Current − Continuous, max: 0.3 A
• Collector Dissipation: 0.25 W
• DC Current Gain (h_fe): 80 to 250
• Transition Frequency, min: 100 MHz
• Noise Figure, max: 8 dB
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23
• Electrically Similar to the Popular 2N5551 transistor

Here is an image showing the pin diagram of this transistor.The PMBT5551 transistor is marked as "pG1".The complementary PNP transistor to the PMBT5551 is the PMBT5401.The 2N5551 is the TO-92 version of the PMBT5551.You can replace the PMBT5551 with the 2N5551S, KST42, KST43, KST5551, MMBT5551 or MMBTA42.