MJE3055TG Bipolar Transistor

Characteristics of MJE3055TG Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 70 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 75 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • The MJE3055TG is the lead-free version of the MJE3055T transistor

Pinout of MJE3055TG

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE3055TG is the MJE2955TG.

Replacement and Equivalent for MJE3055TG transistor

You can replace the MJE3055TG with the 2N6487, 2N6487G, 2N6488, 2N6488G, BD707, BD709, BD711, BD743A, BD743B, BD743C, BD907, BD909, BD911, BDT91, BDT91F, BDT93, BDT93F, BDT95, BDT95F, MJE3055T, MJF3055 or MJF3055G.
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