MJE3055T Bipolar Transistor

Characteristics of MJE3055T Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 70 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 75 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of MJE3055T

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE3055T is the MJE2955T.

Replacement and Equivalent for MJE3055T transistor

You can replace the MJE3055T with the 2N6487, 2N6487G, 2N6488, 2N6488G, BD707, BD709, BD711, BD743A, BD743B, BD743C, BD907, BD909, BD911, BDT91, BDT91F, BDT93, BDT93F, BDT95, BDT95F, MJE3055TG, MJF3055 or MJF3055G.

Lead-free Version

The MJE3055TG transistor is the lead-free version of the MJE3055T.
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