MJE15032G Bipolar Transistor

Characteristics of MJE15032G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 250 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 50
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE15032G is the lead-free version of the MJE15032 transistor

Pinout of MJE15032G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE15032G is the MJE15033G.

Replacement and Equivalent for MJE15032G transistor

You can replace the MJE15032G with the FJP5200, FJP5200O, FJP5200R, FJPF5200, FJPF5200O, FJPF5200R, MJE15032, MJE15034, MJE15034G, MJE5740, MJE5741, MJE5742, TIP160, TIP161 or TIP162.
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