MJE15034G Bipolar Transistor
Characteristics of MJE15034G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 350 V
- Collector-Base Voltage, max: 350 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 100
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
- The MJE15034G is the lead-free version of the MJE15034 transistor
Pinout of MJE15034G
Complementary PNP transistor
Replacement and Equivalent for MJE15034G transistor
If you find an error please send an email to mail@el-component.com