2SB817 Bipolar Transistor

Characteristics of 2SB817 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -40 to +150 °C
  • Package: TO-3P

Pinout of 2SB817

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB817 transistor can have a current gain of 60 to 200. The gain of the 2SB817-D will be in the range from 60 to 120, for the 2SB817-E it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB817 might only be marked "B817".

Complementary NPN transistor

The complementary NPN transistor to the 2SB817 is the 2SD1047.

Replacement and Equivalent for 2SB817 transistor

You can replace the 2SB817 with the 2SB1162, 2SB1163, KTB817, KTB817B, MJW1302A or MJW1302AG.

2SB817 datasheet

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