KSC1008CG Bipolar Transistor

Characteristics of KSC1008CG Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 0.7 A
  • Collector Dissipation: 0.8 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of KSC1008CG

The KSC1008CG is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Suffix "C" means center collector in KSC1008G.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSC1008CG transistor can have a current gain of 200 to 400. The gain of the KSC1008C will be in the range from 40 to 400, for the KSC1008CO it will be in the range from 70 to 140, for the KSC1008CR it will be in the range from 40 to 80, for the KSC1008CY it will be in the range from 120 to 240.

SMD Version of KSC1008CG transistor

The BCV72 (SOT-23) is the SMD version of the KSC1008CG transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KSC1008CG transistor

You can replace the KSC1008CG with the 2SC6043, 2SD1616A, 2SD1616A-K, 2SD438, KSD1616A, KSD1616A-G or KTC1006.
If you find an error please send an email to mail@el-component.com