2SB710A Bipolar Transistor

Characteristics of 2SB710A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 85 to 340
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SB710A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB710A transistor can have a current gain of 85 to 340. The gain of the 2SB710A-Q will be in the range from 85 to 170, for the 2SB710A-R it will be in the range from 120 to 240, for the 2SB710A-S it will be in the range from 170 to 340.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB710A might only be marked "B710A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB710A is the 2SD602A.

Replacement and Equivalent for 2SB710A transistor

You can replace the 2SB710A with the 2SA1518, 2SA1519, 2SA1520, 2SA1521, FMMTA55, FMMTA56, KST55, KST56 or MMBT4354.
If you find an error please send an email to mail@el-component.com