2SB892-T Bipolar Transistor

Characteristics of 2SB892-T Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB892-T

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB892-T transistor can have a current gain of 200 to 400. The gain of the 2SB892 will be in the range from 100 to 560, for the 2SB892-R it will be in the range from 100 to 200, for the 2SB892-S it will be in the range from 140 to 280, for the 2SB892-U it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB892-T might only be marked "B892-T".

Complementary NPN transistor

The complementary NPN transistor to the 2SB892-T is the 2SD1207-T.

SMD Version of 2SB892-T transistor

The 2SB1115 (SOT-89), 2SB1115-YL (SOT-89), 2SB1122 (SOT-89), 2SB1122-T (SOT-89), 2SB1123 (SOT-89), 2SB1123-T (SOT-89) and 2STR2160 (SOT-23) is the SMD version of the 2SB892-T transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB892-T transistor

You can replace the 2SB892-T with the 2SA1382, 2SA1680, 2SA1761, 2SB1229, 2SB1229-T, 2SB985 or 2SB985T.
If you find an error please send an email to mail@el-component.com