2SB1122 Bipolar Transistor

Characteristics of 2SB1122 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 100 to 560
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB1122

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1122 transistor can have a current gain of 100 to 560. The gain of the 2SB1122-R will be in the range from 100 to 200, for the 2SB1122-S it will be in the range from 140 to 280, for the 2SB1122-T it will be in the range from 200 to 400, for the 2SB1122-U it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1122 might only be marked "B1122".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1122 is the 2SD1622.

Replacement and Equivalent for 2SB1122 transistor

You can replace the 2SB1122 with the 2SB1123 or 2SB1124.
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