2SB1123-T Bipolar Transistor

Characteristics of 2SB1123-T Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB1123-T

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1123-T transistor can have a current gain of 200 to 400. The gain of the 2SB1123 will be in the range from 100 to 560, for the 2SB1123-R it will be in the range from 100 to 200, for the 2SB1123-S it will be in the range from 140 to 280, for the 2SB1123-U it will be in the range from 280 to 560.


The 2SB1123-T transistor is marked as "BFT".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1123-T is the 2SD1623-T.

Replacement and Equivalent for 2SB1123-T transistor

You can replace the 2SB1123-T with the 2SB1124, 2SB1124-T or 2STF2360.
If you find an error please send an email to mail@el-component.com