IRFB4233 MOSFET
Specifications of IRFB4233 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 230 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 37 mΩ
- Continuous Drain Current: 56 A
- Total Gate Charge: 120 nC
- Power Dissipation: 370 W
- Package: TO-220AB