IRFB4332 MOSFET
Specifications of IRFB4332 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 250 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 33 mΩ
- Continuous Drain Current: 60 A
- Total Gate Charge: 99 nC
- Power Dissipation: 390 W
- Package: TO-220AB
Pinout of IRFB4332
