IRFB260N MOSFET

Specifications of IRFB260N MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 40 mΩ
  • Continuous Drain Current: 56 A
  • Total Gate Charge: 150 nC
  • Power Dissipation: 380 W
  • Package: TO-220AB

Pinout of IRFB260N

IRFB260N pinout

Replacement and Equivalent of IRFB260N Transistor

You can replace the IRFB260N with the IRFB4332