KTC8050S-D Bipolar Transistor

Characteristics of KTC8050S-D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 35 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 150 to 300
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23
  • Electrically Similar to the Popular KTC8050D transistor

Pinout of KTC8050S-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTC8050S-D transistor can have a current gain of 150 to 300. The gain of the KTC8050S will be in the range from 100 to 300, for the KTC8050S-C it will be in the range from 100 to 200.

Marking

The KTC8050S-D transistor is marked as "BKD".

Complementary PNP transistor

The complementary PNP transistor to the KTC8050S-D is the KTC8550S-D.

KTC8050S-D Transistor in TO-92 Package

The KTC8050D is the TO-92 version of the KTC8050S-D.

Replacement and Equivalent for KTC8050S-D transistor

You can replace the KTC8050S-D with the 2SC4210, BCW65, BCW66, FMMT449, FMMT491, FMMT491Q, FMMT619, KTC3265 or MMBT2222A.
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