BD139-10 Bipolar Transistor

Characteristics of BD139-10 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 63 to 160
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of BD139-10

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD139-10 transistor can have a current gain of 63 to 160. The gain of the BD139 will be in the range from 40 to 250, for the BD139-16 it will be in the range from 100 to 250, for the BD139-6 it will be in the range from 40 to 100.

Complementary PNP transistor

The complementary PNP transistor to the BD139-10 is the BD140-10.

SMD Version of BD139-10 transistor

The BCP56 (SOT-223), BCP56-10 (SOT-223), BCX56 (SOT-89) and BCX56-10 (SOT-89) is the SMD version of the BD139-10 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD139-10 transistor

You can replace the BD139-10 with the 2SC2481, 2SC3621, 2SD669, 2SD669A, BD139G, BD169, BD179, BD179-10, BD179G, BD230, BD237, BD237G, BD379, BD379-10, BD789, BD791, KSE182, MJE182, MJE182G, MJE240, MJE241, MJE242, MJE243, MJE243G, MJE244 or MJE722.
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