2SD1262-Q Bipolar Transistor

Characteristics of 2SD1262-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 45 W
  • DC Current Gain (hfe): 2000 to 5000
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1262-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1262-Q transistor can have a current gain of 2000 to 5000. The gain of the 2SD1262 will be in the range from 1000 to 10000, for the 2SD1262-P it will be in the range from 4000 to 10000, for the 2SD1262-R it will be in the range from 1000 to 2500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1262-Q might only be marked "D1262-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1262-Q is the 2SB939-Q.

Replacement and Equivalent for 2SD1262-Q transistor

You can replace the 2SD1262-Q with the 2SD1262A, 2SD1262A-Q, MJD122, MJD122G, MJD122T4 or MJD122T4G.
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