2SD1261-P Bipolar Transistor

Characteristics of 2SD1261-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 4000 to 10000
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1261-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1261-P transistor can have a current gain of 4000 to 10000. The gain of the 2SD1261 will be in the range from 1000 to 10000, for the 2SD1261-Q it will be in the range from 2000 to 5000, for the 2SD1261-R it will be in the range from 1000 to 2500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1261-P might only be marked "D1261-P".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1261-P is the 2SB938-P.

SMD Version of 2SD1261-P transistor

The FZT692B (SOT-223) is the SMD version of the 2SD1261-P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1261-P transistor

You can replace the 2SD1261-P with the 2SD1223, 2SD1261A, 2SD1261A-P, 2SD1262, 2SD1262-P, 2SD1262A, 2SD1262A-P, MJD122, MJD122G, MJD122T4 or MJD122T4G.
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