2N5884G Bipolar Transistor
Characteristics of 2N5884G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -25 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 20 to 100
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
- The 2N5884G is the lead-free version of the 2N5884 transistor
Pinout of 2N5884G
Complementary NPN transistor
Replacement and Equivalent for 2N5884G transistor
If you find an error please send an email to mail@el-component.com