IRFB3206G MOSFET

Specifications of IRFB3206G MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 60 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 3 mΩ
  • Continuous Drain Current: 210 A
  • Total Gate Charge: 120 nC
  • Power Dissipation: 300 W
  • Package: TO-220AB

Pinout of IRFB3206G

IRFB3206G pinout

Replacement and Equivalent of IRFB3206G Transistor

You can replace the IRFB3206G with the IRFB3006, IRFB3006G, IRFB3206